BC856W,135
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- Mfr.Part #
- BC856W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC856W - SMALL SIGN
- Stock
- 139,766
- In Stock ：
- 139,766
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 200mW
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector-Base Capacitance-Max :
- 5pF
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 65V
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BC856
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Published :
- 2009
- Number of Terminations :
- 3
- Datasheets
- BC856W,135
BC856W,135 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856W,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856W,135 Applications
There are a lot of Nexperia USA Inc.
BC856W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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