BC856W,135
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- Mfr.Part #
- BC856W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC856W - SMALL SIGN
- Stock
- 139,766
- In Stock ：
- 139,766
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 65V
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector-Base Capacitance-Max :
- 5pF
- Base Part Number :
- BC856
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 65V
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Power Dissipation :
- 200mW
- Datasheets
- BC856W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856W,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856W,135 Applications
There are a lot of Nexperia USA Inc.
BC856W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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