BC856BM3T5G
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- Mfr.Part #
- BC856BM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT723
- Stock
- 25
- In Stock ：
- 25
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -65V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 65V
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Published :
- 2006
- Element Configuration :
- Single
- Base Part Number :
- BC856BM
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- Collector Emitter Saturation Voltage :
- -650mV
- Terminal Position :
- Dual
- Pin Count :
- 3
- Power Dissipation :
- 640mW
- hFE Min :
- 150
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 265mW
- Length :
- 1.25mm
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Width :
- 850μm
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Emitter Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Height :
- 550μm
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Current Rating :
- -100mA
- Power - Max :
- 265mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SOT-723
- Surface Mount :
- yes
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- BC856BM3T5G
BC856BM3T5G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
BC856BM3T5G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC856BM3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BM3T5G Applications
There are a lot of ON Semiconductor
BC856BM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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