BC856BM3T5G
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- Mfr.Part #
- BC856BM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT723
- Stock
- 25
- In Stock ：
- 25
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- -650mV
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Surface Mount :
- yes
- Max Collector Current :
- 100mA
- Package / Case :
- SOT-723
- Power - Max :
- 265mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- -65V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 65V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Type :
- PNP
- Power Dissipation :
- 640mW
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC856BM
- Number of Pins :
- 3
- Current Rating :
- -100mA
- Width :
- 850μm
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 65V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 265mW
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Height :
- 550μm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 1.25mm
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- hFE Min :
- 150
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Datasheets
- BC856BM3T5G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
BC856BM3T5G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC856BM3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BM3T5G Applications
There are a lot of ON Semiconductor
BC856BM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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