BC856B-13-F
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- Mfr.Part #
- BC856B-13-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 2,992
- In Stock ：
- 2,992
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- -650mV
- Collector Emitter Breakdown Voltage :
- 65V
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC856B
- Power Dissipation :
- 350mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 350mW
- Power - Max :
- 310mW
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 200MHz
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15μA ICBO
- Operating Temperature :
- -65°C~150°C TJ
- Mount :
- Surface Mount
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 19 Weeks
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Additional Feature :
- High Reliability
- Frequency :
- 200MHz
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Pbfree Code :
- yes
- Continuous Collector Current :
- -100mA
- Transition Frequency :
- 200MHz
- hFE Min :
- 220
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC856B-13-F
PNP -65°C~150°C TJ 15μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856B-13-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856B-13-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BC856B-13-F Applications
There are a lot of Diodes Incorporated
BC856B-13-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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