BC850CLT1G
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- Mfr.Part #
- BC850CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 6,516
- In Stock ：
- 6,516
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 45V
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 225mW
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Current Rating :
- 100mA
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Width :
- 1.3mm
- Base Part Number :
- BC850*L
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- hFE Min :
- 420
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Published :
- 2005
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Pin Count :
- 3
- Height :
- 940μm
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC850CLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC850CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC850CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850CLT1G Applications
There are a lot of ON Semiconductor
BC850CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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