BC850BE6327HTSA1
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- Mfr.Part #
- BC850BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT-23
- Stock
- 1,406
- In Stock ：
- 1,406
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G3
- Terminal Finish :
- Tin (Sn)
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2007
- Surface Mount :
- yes
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 100mA
- Frequency - Transition :
- 250MHz
- Additional Feature :
- LOW NOISE
- Power - Max :
- 330mW
- Base Part Number :
- BC850
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Datasheets
- BC850BE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850BE6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 250MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC850BE6327HTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 250MHz
BC850BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC850BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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