BBS3002-TL-1E
- Mfr.Part #
- BBS3002-TL-1E
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 100A D2PAK
- Stock
- 2,169
- In Stock :
- 2,169
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 95 ns
- Pin Count :
- 2
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 400A
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 2.084002g
- Drain-source On Resistance-Max :
- 0.009Ohm
- Packaging :
- Tape and Reel (TR)
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -60V
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Number of Pins :
- 2
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Turn-Off Delay Time :
- 800 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13200pF @ 20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 10 Weeks
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 50A, 10V
- Power Dissipation-Max :
- 90W Tc
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 820 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation :
- 90W
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e3
- Rise Time :
- 1μs
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- -100A
- Max Junction Temperature (Tj) :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 5.08mm
- Avalanche Energy Rating (Eas) :
- 340 mJ
- Published :
- 1999
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Datasheets
- BBS3002-TL-1E

P-Channel Tape & Reel (TR) 5.8m Ω @ 50A, 10V ±20V 13200pF @ 20V 280nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BBS3002-TL-1E Description
BBS3002-TL-1E is a -60V P-channel power MOSFET. A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. One of the great advantages of the P-channel MOSFET characteristics is the simplified gate driving technique that often reduces overall cost. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor BBS3002-TL-1E in the TO-263-4 package with 90W power dissipation.
BBS3002-TL-1E Features
ON-resistance RDS(on)1=4.4mΩ (typ.)
Input capacitance Ciss=13200pF (typ.)
4V drive
Drain to Source Voltage:-60V
Gate to Source Voltage: ±20V
BBS3002-TL-1E Applications
Communications equipment
Datacom module
Industrial
Medical
Personal electronics
PC & notebooks
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