BBS3002-TL-1E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 50A, 10V

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

13200pF @ 20V

Pin Count :

2

Power Dissipation :

90W

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-60V

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Terminal Position :

Single

Number of Channels :

1

Number of Elements :

1

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.009Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

2

Pbfree Code :

yes

Weight :

2.084002g

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

5.08mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Turn-Off Delay Time :

800 ns

Fall Time (Typ) :

820 ns

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

340 mJ

ECCN Code :

EAR99

Power Dissipation-Max :

90W Tc

Rise Time :

1μs

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

400A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Continuous Drain Current (ID) :

-100A

Turn On Delay Time :

95 ns

Published :

1999

Case Connection :

DRAIN