BAW56W135

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Speed :

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time :

4 ns

JESD-609 Code :

e3

Recovery Time :

4 ns

Diode Type :

Standard

Contact Plating :

Tin

Max Repetitive Reverse Voltage (Vrrm) :

90V

Pin Count :

3

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Non-Repetitive Surge Current :

4A

Max Surge Current :

4A

Radiation Hardening :

No

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Number of Elements :

2

Mount :

Surface Mount

Base Part Number :

BAW56W

Mounting Type :

Surface Mount

Max Reverse Voltage (DC) :

90V

Current - Average Rectified (Io) :

150mA DC

JESD-30 Code :

R-PDSO-G3

Current - Reverse Leakage @ Vr :

500nA @ 80V

Max Operating Temperature :

150°C

Operating Temperature - Junction :

150°C Max

Diode Element Material :

SILICON

Element Configuration :

Common Anode

Diode Configuration :

1 Pair Common Anode

Output Current-Max :

0.15A

Number of Pins :

70

Reference Standard :

AEC-Q101; IEC-60134

Max Power Dissipation :

200mW

Max Reverse Leakage Current :

500nA

RoHS Status :

ROHS3 Compliant

Average Rectified Current :

150mA

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Forward Current :

150mA

Factory Lead Time :

4 Weeks

Forward Voltage :

1.25V

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing

Terminal Position :

Dual