BAW56W135

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Mounting Type :

Surface Mount

Number of Terminations :

3

Contact Plating :

Tin

Current - Average Rectified (Io) :

150mA DC

Output Current-Max :

0.15A

Max Surge Current :

4A

Radiation Hardening :

No

Speed :

Small Signal =< 200mA (Io), Any Speed

Terminal Form :

Gull wing

Operating Temperature - Junction :

150°C Max

JESD-30 Code :

R-PDSO-G3

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

4 ns

Terminal Position :

Dual

Forward Current :

150mA

Diode Type :

Standard

Max Reverse Leakage Current :

500nA

Package / Case :

SC-70, SOT-323

Current - Reverse Leakage @ Vr :

500nA @ 80V

Reference Standard :

AEC-Q101; IEC-60134

Max Repetitive Reverse Voltage (Vrrm) :

90V

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

2

Recovery Time :

4 ns

Base Part Number :

BAW56W

Diode Element Material :

SILICON

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Forward Voltage :

1.25V

Element Configuration :

Common Anode

Average Rectified Current :

150mA

Max Reverse Voltage (DC) :

90V

Pin Count :

3

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Diode Configuration :

1 Pair Common Anode

RoHS Status :

ROHS3 Compliant

Peak Non-Repetitive Surge Current :

4A

Published :

2007

Max Power Dissipation :

200mW

Number of Pins :

70