BAW56,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Surface Mount :

yes

Max Repetitive Reverse Voltage (Vrrm) :

90V

Height :

1.1mm

Factory Lead Time :

4 Weeks

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Diode Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Reverse Voltage :

90V

JESD-609 Code :

e3

Ambient Temperature Range High :

150°C

Peak Reverse Current :

150μA

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

4ns

Number of Pins :

3

Power Dissipation-Max :

0.25W

Terminal Position :

Dual

Base Part Number :

BAW56

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Diode Configuration :

1 Pair Common Anode

Pin Count :

3

Forward Voltage :

1.25V

Operating Temperature - Junction :

150°C Max

Number of Elements :

2

ECCN Code :

EAR99

Current - Reverse Leakage @ Vr :

500nA @ 80V

Output Current-Max :

0.215A

Published :

2007

Max Forward Surge Current (Ifsm) :

4A

Diode Type :

Standard

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Current - Average Rectified (Io) :

215mA DC

HTS Code :

8541.10.00.70

Terminal Form :

Gull wing

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Forward Current :

125mA