BAW56W,135

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Packaging :

Tape and Reel (TR)

Max Repetitive Reverse Voltage (Vrrm) :

90V

Number of Terminations :

3

Max Power Dissipation :

200mW

Terminal Position :

Dual

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Mount :

Surface Mount

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Non-Repetitive Surge Current :

4A

Reference Standard :

AEC-Q101; IEC-60134

Radiation Hardening :

No

Pin Count :

3

Terminal Form :

Gull wing

Recovery Time :

4 ns

Max Surge Current :

4A

JESD-609 Code :

e3

Speed :

Small Signal =< 200mA (Io), Any Speed

Max Operating Temperature :

150°C

Base Part Number :

BAW56W

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Common Anode

Number of Pins :

70

Diode Type :

Standard

Operating Temperature - Junction :

150°C Max

Factory Lead Time :

4 Weeks

Reverse Recovery Time :

4 ns

Published :

2007

Current - Average Rectified (Io) :

150mA DC

Number of Elements :

2

Diode Element Material :

SILICON

Diode Configuration :

1 Pair Common Anode

Max Reverse Voltage (DC) :

90V

Max Reverse Leakage Current :

500nA

Output Current-Max :

0.15A

Average Rectified Current :

150mA

Forward Voltage :

1.25V

Min Operating Temperature :

-65°C

Forward Current :

150mA

JESD-30 Code :

R-PDSO-G3

Current - Reverse Leakage @ Vr :

500nA @ 80V