BAW56LT1G
- Mfr.Part #
- BAW56LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- DIODE ARRAY GP 70V 200MA SOT23-3
- Stock
- 39,052
- In Stock :
- 39,052
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- Manufacturer :
- onsemi
- Product Category :
- Diodes - Rectifiers - Arrays
- Peak Reflow Temperature (Cel) :
- 260
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- No SVHC
- Length :
- 2.9mm
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reverse Current :
- 2.5μA
- Terminal Form :
- Gull wing
- Max Reverse Leakage Current :
- 2.4µA
- Forward Current :
- 200mA
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Diode Configuration :
- 1 Pair Common Anode
- Max Reverse Voltage (DC) :
- 70V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Current Rating :
- 200mA
- Output Current-Max :
- 0.1A
- Max Operating Temperature :
- 150°C
- Contact Plating :
- Tin
- Published :
- 2001
- Forward Voltage :
- 1.25V
- Voltage - Rated DC :
- 70V
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Max Surge Current :
- 4A
- Max Power Dissipation :
- 225mW
- Width :
- 1.3mm
- Termination :
- SMD/SMT
- Peak Non-Repetitive Surge Current :
- 4A
- Pbfree Code :
- yes
- Diode Type :
- Standard
- Diode Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Repetitive Reverse Voltage (Vrrm) :
- 70V
- Max Forward Surge Current (Ifsm) :
- 500mA
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Reverse Recovery Time :
- 6 ns
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 940μm
- Current - Average Rectified (Io) :
- 200mA DC
- Packaging :
- Cut Tape (CT)
- Power Dissipation :
- 300mW
- Recovery Time :
- 6 ns
- ECCN Code :
- EAR99
- Base Part Number :
- BAW56L
- Current - Reverse Leakage @ Vr :
- 2.5μA @ 70V
- Operating Temperature - Junction :
- -55°C~150°C
- Average Rectified Current :
- 200mA
- Voltage - Forward (Vf) (Max) @ If :
- 1.25V @ 150mA
- Number of Elements :
- 2
- HTS Code :
- 8541.10.00.70
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Common Anode
- Surface Mount :
- yes
- Datasheets
- BAW56LT1G

Standard Rectifier Diode 1 Pair Common Anode Small Signal =< 200mA (Io), Any Speed -55°C~150°C 200mA 70V-DC 2-Element TO-236-3, SC-59, SOT-23-3 Surface Mount
BAW56LT1G Overview
This device will operate when the forward voltage is set to 1.25V.A maximum output voltage of 0.1A can be supported.Surge currents should be monitored and prevented from exceeding 4A.This device will operate when the forward voltage is set to 200mA.The part can be used to draw a current of 200mA.A reverse voltage peak of 2.5μA is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 2.4μA, which is the current flowing from that semiconductor device.Due to its primary action, this electronic or electrical device produces 300mW of heat (energy loss).In this electronic or electrical device, the maximum amount of 225mW heat is generated (energy is wasted).
BAW56LT1G Features
1.25V forward voltage
a maximum output voltage of 0.1A
a peak voltage of 2.5μA
a reverse voltage peak of 2.5μA
BAW56LT1G Applications
There are a lot of ON Semiconductor
BAW56LT1G applications of rectifier diode array.
- Rectifier for drives applications
- Crowbar applications
- Rectifiers for UBS
- Battery chargers
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
- General Rectification
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