BAS45AL,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Speed :

Standard Recovery >500ns, > 200mA (Io)

Case Connection :

Isolated

Current - Reverse Leakage @ Vr :

1nA @ 125V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Reverse Recovery Time :

1.5μs

Voltage - DC Reverse (Vr) (Max) :

125V

Number of Elements :

1

Diode Type :

Standard

Operating Temperature (Max) :

175°C

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Current - Average Rectified (Io) :

250mA DC

Number of Pins :

2

JESD-609 Code :

e3

Terminal Position :

END

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW LEAKAGE CURRENT

Forward Current :

250mA

Pin Count :

2

Package / Case :

DO-213AC, MINI-MELF, SOD-80

Voltage - Forward (Vf) (Max) @ If :

1V @ 100mA

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Base Part Number :

BAS45

Capacitance @ Vr, F :

4pF @ 0V 1MHz

Configuration :

Single

ECCN Code :

EAR99

HTS Code :

8541.10.00.70

Power Dissipation-Max :

0.4W

Published :

2010

Operating Temperature - Junction :

175°C Max

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Terminal Form :

WRAP AROUND

Diode Element Material :

SILICON