BAS40-06W,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Voltage - Forward (Vf) (Max) @ If :

1V @ 40mA

Peak Reverse Current :

10μA

Max Reverse Leakage Current :

10μA

Package / Case :

SC-70, SOT-323

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Diode Type :

Schottky

JESD-609 Code :

e3

Min Operating Temperature :

-65°C

Forward Current :

120mA

RoHS Status :

ROHS3 Compliant

Max Forward Surge Current (Ifsm) :

200mA

Terminal Position :

Dual

REACH SVHC :

No SVHC

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Pin Count :

3

Average Rectified Current :

120mA

Max Repetitive Reverse Voltage (Vrrm) :

40V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Diode Configuration :

1 Pair Common Anode

Terminal Form :

Gull wing

Element Configuration :

Common Anode

Base Part Number :

BAS40-06W

HTS Code :

8541.10.00.70

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Additional Feature :

LOW LEAKAGE CURRENT

Operating Temperature - Junction :

150°C Max

Peak Non-Repetitive Surge Current :

200mA

Forward Voltage :

1V

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

Speed :

Small Signal =< 200mA (Io), Any Speed

Max Reverse Voltage (DC) :

40V

ECCN Code :

EAR99

Number of Pins :

3

Lead Free :

Lead Free

Current - Average Rectified (Io) :

120mA DC

Output Current-Max :

0.12A

Radiation Hardening :

No

Max Surge Current :

200mA

Current - Reverse Leakage @ Vr :

10μA @ 40V

Diode Element Material :

SILICON