BAS19LT1G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Number of Terminations :

3

Average Rectified Current :

200mA

Max Repetitive Reverse Voltage (Vrrm) :

120V

Radiation Hardening :

No

HTS Code :

8541.10.00.70

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Max Reverse Voltage (DC) :

120V

Peak Reverse Current :

100nA

Max Forward Surge Current (Ifsm) :

625mA

Height :

940μm

Forward Voltage :

1.25V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Diode Type :

Standard

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pin Count :

3

Operating Temperature - Junction :

-55°C~150°C

Speed :

Small Signal =< 200mA (Io), Any Speed

Terminal Form :

Gull wing

Terminal Position :

Dual

Number of Elements :

1

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Factory Lead Time :

4 Weeks

Recovery Time :

50 ns

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Average Rectified (Io) :

200mA DC

Halogen Free :

Halogen Free

Reverse Recovery Time :

50 ns

Max Operating Temperature :

150°C

Max Surge Current :

625mA

Lead Free :

Lead Free

Output Current :

200mA

Element Configuration :

Single

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Current - Reverse Leakage @ Vr :

100nA @ 100V

Base Part Number :

BAS19

Pbfree Code :

yes

Forward Current :

200mA

Contact Plating :

Tin

Max Reverse Leakage Current :

100nA

Power Dissipation :

385mW

Width :

1.3mm

Breakdown Voltage :

120V

Mounting Type :

Surface Mount

Number of Pins :

3

Capacitance :

5pF

JESD-609 Code :

e3

Diode Element Material :

SILICON

Peak Non-Repetitive Surge Current :

625mA

ECCN Code :

EAR99