BAS101S,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

JESD-30 Code :

R-PDSO-G3

Current - Average Rectified (Io) :

200mA DC

JESD-609 Code :

e3

Operating Temperature - Junction :

150°C Max

Reverse Recovery Time :

50ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Reverse Leakage @ Vr :

150nA @ 250V

Diode Type :

Standard

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Voltage - Forward (Vf) (Max) @ If :

1.1V @ 100mA

Diode Configuration :

1 Pair Series Connection

Power Dissipation-Max :

0.25W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - DC Reverse (Vr) (Max) :

300V

JEDEC-95 Code :

TO-236AB

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Base Part Number :

BAS101S

Rep Pk Reverse Voltage-Max :

600V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Surface Mount :

yes

Diode Element Material :

SILICON

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Output Current-Max :

0.1A

Speed :

Small Signal =< 200mA (Io), Any Speed

Reference Standard :

IEC-60134