BAS116,235

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Diode Type :

Standard

Element Configuration :

Single

Additional Feature :

LOW LEAKAGE CURRENT

Forward Current :

215mA

Diode Element Material :

SILICON

Operating Temperature - Junction :

150°C Max

Base Part Number :

BAS116

Contact Plating :

Tin

JESD-609 Code :

e3

Radiation Hardening :

No

Max Repetitive Reverse Voltage (Vrrm) :

85V

Current - Average Rectified (Io) :

215mA DC

Number of Elements :

1

Peak Reverse Current :

5nA

Recovery Time :

3 μs

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Current - Reverse Leakage @ Vr :

5nA @ 75V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Output Current-Max :

0.215A

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Reverse Recovery Time :

3 μs

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Terminal Position :

Dual

HTS Code :

8541.10.00.70

Peak Non-Repetitive Surge Current :

4A

Number of Terminations :

3

Mount :

Surface Mount

Max Surge Current :

4A

Speed :

Standard Recovery >500ns, > 200mA (Io)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Voltage :

1.25V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Min Operating Temperature :

-65°C

Pin Count :

3

Power Dissipation-Max :

0.25W

Max Reverse Voltage (DC) :

75V

Reverse Voltage :

85V

Average Rectified Current :

215mA

Lead Free :

Lead Free