BAS116,235

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Forward Current :

215mA

Max Surge Current :

4A

Mount :

Surface Mount

Radiation Hardening :

No

Max Operating Temperature :

150°C

Operating Temperature - Junction :

150°C Max

Terminal Form :

Gull wing

Forward Voltage :

1.25V

Peak Non-Repetitive Surge Current :

4A

Diode Element Material :

SILICON

Current - Reverse Leakage @ Vr :

5nA @ 75V

Contact Plating :

Tin

Recovery Time :

3 μs

Element Configuration :

Single

Diode Type :

Standard

Number of Elements :

1

Power Dissipation-Max :

0.25W

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Max Reverse Voltage (DC) :

75V

Number of Pins :

3

Peak Reverse Current :

5nA

Terminal Position :

Dual

Reverse Recovery Time :

3 μs

Lead Free :

Lead Free

Base Part Number :

BAS116

HTS Code :

8541.10.00.70

Pin Count :

3

Average Rectified Current :

215mA

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

JESD-609 Code :

e3

Speed :

Standard Recovery >500ns, > 200mA (Io)

Max Repetitive Reverse Voltage (Vrrm) :

85V

Additional Feature :

LOW LEAKAGE CURRENT

Current - Average Rectified (Io) :

215mA DC

Peak Reflow Temperature (Cel) :

260

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Output Current-Max :

0.215A

Reverse Voltage :

85V