BAS19,235

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Single

Current - Average Rectified (Io) :

200mA DC

Diode Element Material :

SILICON

Radiation Hardening :

No

HTS Code :

8541.10.00.70

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Base Part Number :

BAS19

Max Reverse Leakage Current :

100nA

Power Dissipation-Max :

0.25W

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature - Junction :

150°C Max

Factory Lead Time :

4 Weeks

Number of Pins :

3

Diode Type :

Standard

Output Current-Max :

0.2A

Current - Reverse Leakage @ Vr :

100nA @ 100V

Number of Elements :

1

Contact Plating :

Tin

Recovery Time :

50 ns

Forward Current :

200mA

Min Operating Temperature :

-65°C

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Max Surge Current :

1.7A

Number of Terminations :

3

Terminal Position :

Dual

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Terminal Form :

Gull wing

Peak Non-Repetitive Surge Current :

1.7A

Packaging :

Tape and Reel (TR)

Reverse Recovery Time :

50 ns

Forward Voltage :

1.25V

Pin Count :

3

Max Repetitive Reverse Voltage (Vrrm) :

120V

Average Rectified Current :

200mA

Speed :

Small Signal =< 200mA (Io), Any Speed

Max Reverse Voltage (DC) :

100V

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Number of Phases :

1

ECCN Code :

EAR99