BAS19,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Temperature (Max) :

150°C

Number of Phases :

1

Time@Peak Reflow Temperature-Max (s) :

30

Speed :

Small Signal =< 200mA (Io), Any Speed

Reverse Current-Max :

0.1μA

Number of Elements :

1

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

0.25W

Rep Pk Reverse Voltage-Max :

120V

Published :

2001

Breakdown Voltage-Min :

100V

Output Current-Max :

0.2A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Terminal Position :

Dual

Pin Count :

3

Current - Average Rectified (Io) :

200mA DC

Diode Element Material :

SILICON

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Surface Mount :

yes

HTS Code :

8541.10.00.70

Peak Reflow Temperature (Cel) :

260

Reverse Test Voltage :

100V

Forward Current :

200mA

Diode Type :

Standard

Configuration :

Single

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Reverse Recovery Time :

50ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

BAS19

Voltage - DC Reverse (Vr) (Max) :

100V

ECCN Code :

EAR99

Operating Temperature - Junction :

150°C Max

Terminal Form :

Gull wing

Current - Reverse Leakage @ Vr :

100nA @ 100V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount