BAS116GWJ

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Single

JESD-609 Code :

e3

Output Current-Max :

0.215A

Current - Average Rectified (Io) :

215mA DC

Number of Phases :

1

Breakdown Voltage-Min :

75V

Package / Case :

SOD-123

Number of Terminations :

2

Voltage - DC Reverse (Vr) (Max) :

75V

Speed :

Standard Recovery >500ns, > 200mA (Io)

Configuration :

Single

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

2016

Number of Elements :

1

Reference Standard :

AEC-Q101; IEC-60134

Operating Temperature (Max) :

150°C

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Reverse Recovery Time :

3μs

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Series :

Automotive, AEC-Q101

Non-rep Pk Forward Current-Max :

1A

Factory Lead Time :

4 Weeks

Current - Reverse Leakage @ Vr :

5nA @ 75V

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-G2

Power Dissipation-Max :

0.357W

Surface Mount :

yes

Diode Type :

Standard

RoHS Status :

ROHS3 Compliant

Reverse Current-Max :

0.005μA

Reverse Test Voltage :

75V

Terminal Position :

Dual

Operating Temperature - Junction :

150°C Max

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Rep Pk Reverse Voltage-Max :

85V