AUIRLU2905

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Drain-source On Resistance-Max :

0.03Ohm

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±16V

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

160A

DS Breakdown Voltage-Min :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Surface Mount :

No

Published :

2000

Avalanche Energy Rating (Eas) :

210 mJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Reference Standard :

AEC-Q101

Packaging :

Tube

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain Current-Max (Abs) (ID) :

42A

Terminal Position :

Single

Number of Terminations :

3

Power Dissipation-Max :

110W Tc

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED