AUIRLU024Z
- Mfr.Part #
- AUIRLU024Z
- Manufacturer
- International Rectifier
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 16A I-PAK
- Stock
- 19,050
- In Stock :
- 19,050
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- DS Breakdown Voltage-Min :
- 55V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.9nC @ 5V
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Factory Lead Time :
- 13 Weeks
- Gate to Source Voltage (Vgs) :
- 16V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Vgs (Max) :
- ±16V
- Transistor Element Material :
- SILICON
- Series :
- HEXFET®
- Drain-source On Resistance-Max :
- 0.058Ohm
- Rds On (Max) @ Id, Vgs :
- 58m Ω @ 9.6A, 10V
- Published :
- 2013
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 55V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Continuous Drain Current (ID) :
- 16A
- Power Dissipation-Max :
- 35W Tc
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 64A
- Number of Pins :
- 3
- Power Dissipation :
- 35W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Datasheets
- AUIRLU024Z

N-Channel Tube 58m Ω @ 9.6A, 10V ±16V 380pF @ 25V 9.9nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA
AUIRLU024Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 25 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 380pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.As far as peak drain current is concerned, its maximum pulsed current is 64A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.The DS breakdown voltage should be maintained above 55V to maintain normal operation.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
AUIRLU024Z Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 64A.
a 55V drain to source voltage (Vdss)
AUIRLU024Z Applications
There are a lot of Infineon Technologies
AUIRLU024Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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