AUIRLU024Z
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- Mfr.Part #
- AUIRLU024Z
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 16A IPAK
- Stock
- 19,050
- In Stock ：
- 19,050
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 55V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs :
- 9.9nC @ 5V
- Packaging :
- Tube
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Drain to Source Voltage (Vdss) :
- 55V
- Mount :
- Through Hole
- Series :
- HEXFET®
- Number of Terminations :
- 3
- Published :
- 2013
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 64A
- Power Dissipation-Max :
- 35W Tc
- Power Dissipation :
- 35W
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 16V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.058Ohm
- Factory Lead Time :
- 13 Weeks
- Continuous Drain Current (ID) :
- 16A
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Vgs (Max) :
- ±16V
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 58m Ω @ 9.6A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Datasheets
- AUIRLU024Z
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N-Channel Tube 58m Ω @ 9.6A, 10V ±16V 380pF @ 25V 9.9nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA
AUIRLU024Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 25 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 380pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.As far as peak drain current is concerned, its maximum pulsed current is 64A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.The DS breakdown voltage should be maintained above 55V to maintain normal operation.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
AUIRLU024Z Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 64A.
a 55V drain to source voltage (Vdss)
AUIRLU024Z Applications
There are a lot of Infineon Technologies
AUIRLU024Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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