AUIRLS3036-7P

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Height :

4.83mm

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 4.5V

Continuous Drain Current (ID) :

240A

Turn-Off Delay Time :

89 ns

Element Configuration :

Single

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 180A, 10V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Rise Time :

540ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Threshold Voltage :

1V

Width :

9.65mm

Power Dissipation-Max :

380W Tc

Number of Pins :

7

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G6

Published :

2011

Avalanche Energy Rating (Eas) :

300 mJ

JEDEC-95 Code :

TO-263CB

Vgs (Max) :

±16V

Turn On Delay Time :

81 ns

Number of Terminations :

6

Fall Time (Typ) :

170 ns

Input Capacitance (Ciss) (Max) @ Vds :

11270pF @ 50V

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Power Dissipation :

380W

Series :

HEXFET®

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30