AUIRLS3034

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Height :

4.83mm

Rise Time :

827ns

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

Mount :

Surface Mount

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Fall Time (Typ) :

355 ns

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

195A

Terminal Position :

Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Number of Elements :

1

Width :

9.65mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

375W Tc

Power Dissipation :

375W

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Published :

2011

FET Type :

N-Channel

Case Connection :

DRAIN

Contact Plating :

Tin

Turn On Delay Time :

65 ns

Avalanche Energy Rating (Eas) :

255 mJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

39 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Turn-Off Delay Time :

97 ns

Length :

10.67mm

Series :

HEXFET®