AUIRLS3034

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Power Dissipation :

375W

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Turn-Off Delay Time :

97 ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Vgs (Max) :

±20V

Width :

9.65mm

ECCN Code :

EAR99

Terminal Position :

Single

Length :

10.67mm

Power Dissipation-Max :

375W Tc

Avalanche Energy Rating (Eas) :

255 mJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Factory Lead Time :

39 Weeks

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Contact Plating :

Tin

Fall Time (Typ) :

355 ns

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

195A

Drain to Source Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn On Delay Time :

65 ns

Rise Time :

827ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

195A Tc