AUIRLR3636TRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

DPAK

Number of Elements :

1

Polarity :

N

Mounting :

Surface Mount

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

60 V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Height :

2.3 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Width :

6.22 mm

Product Type :

MOSFET

Additional Feature :

ULTRA-LOW RESISTANCE

Base Product Number :

AUIRLR3636

Transistor Element Material :

SILICON

Operating Temp Range :

-55C to 175C

Continuous Drain Current Id :

99

Channel Type :

N

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

6.8mOhm @ 50A, 10V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET?

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Surface Mount :

yes

Minimum Operating Temperature :

- 55 C

Drain-Source On-Volt :

60(V)

FET Feature :

-

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Package :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max (Abs) :

143 W

RoHS :

Details

Power Dissipation :

143

Packaging :

Tape and Reel

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3779 pF @ 50 V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 4.5 V

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Manufacturer :

Infineon

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Configuration :

Single

Operating Temperature :

-55°C ~ 175°C (TJ)

Power Dissipation (Max) :

143W (Tc)

Product Category :

MOSFET

Continuous Drain Current :

99(A)

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Operating Temperature Classification :

Military

Pin Count :

2 +Tab

Avalanche Energy Rating (Eas) :

170 mJ

Transistor Polarity :

N-Channel

Gate-Source Voltage (Max) :

±16(V)

Qualification :

AEC-Q101

Product Status :

Not For New Designs

Brand :

Infineon Technologies

Rad Hardened :

No

Drain-source On Resistance-Max :

0.0083 Ω

Mounting Style :

SMD/SMT

Drain to Source Voltage (Vdss) :

60 V

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

99 A

Supplier Device Package :

D-Pak

Length :

6.5 mm

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

396 A

Maximum Operating Temperature :

+ 175 C

Type :

Power MOSFET

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Number of Terminals :

2