AUIRLR3636TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Operating Temperature Classification :

Military

Operating Temperature :

-55°C ~ 175°C (TJ)

Transistor Polarity :

N-Channel

Series :

HEXFET?

Package Shape :

RECTANGULAR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package :

D-Pak

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

SMD/SMT

Type :

Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 4.5 V

Reach Compliance Code :

Compliant

Qualification :

AEC-Q101

RoHS :

Details

Length :

6.5 mm

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Form :

Gull wing

Subcategory :

MOSFETs

DS Breakdown Voltage-Min :

60 V

Number of Terminals :

2

Maximum Operating Temperature :

+ 175 C

Brand :

Infineon Technologies

Drain to Source Voltage (Vdss) :

60 V

Channel Type :

N

Product Category :

MOSFET

Mounting :

Surface Mount

Drain-source On Resistance-Max :

0.0083 Ω

Minimum Operating Temperature :

- 55 C

Rad Hardened :

No

Power Dissipation :

143

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Drain-Source On-Volt :

60(V)

Packaging :

Tape and Reel

Height :

2.3 mm

Drain Current-Max (Abs) (ID) :

99 A

Pulsed Drain Current-Max (IDM) :

396 A

Transistor Type :

1 N-Channel

JESD-609 Code :

e3

Pin Count :

2 +Tab

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

170 mJ

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Gate-Source Voltage (Max) :

±16(V)

Additional Feature :

ULTRA-LOW RESISTANCE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Product Type :

MOSFET

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

6.8mOhm @ 50A, 10V

Manufacturer :

Infineon

Product Status :

Not For New Designs

Operating Temp Range :

-55C to 175C

Power Dissipation-Max (Abs) :

143 W

Continuous Drain Current :

99(A)

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Continuous Drain Current Id :

99

Transistor Element Material :

SILICON

FET Type :

N-Channel

FET Feature :

-

Width :

6.22 mm

Configuration :

Single

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Package :

Tape and Reel (TR)

Polarity :

N

Power Dissipation (Max) :

143W (Tc)

Package Type :

DPAK

Transistor Application :

SWITCHING

Surface Mount :

yes

Base Product Number :

AUIRLR3636

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3779 pF @ 50 V