AUIRLR3636

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

50A

Published :

2011

Length :

6.73mm

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

99A

JESD-609 Code :

e3

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

69 ns

Base Part Number :

AUIRLR3636

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

143W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Height :

2.39mm

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

143W Tc

Rise Time :

216ns

Gate to Source Voltage (Vgs) :

16V

Turn On Delay Time :

45 ns

Vgs (Max) :

±16V

Series :

HEXFET®

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

43 ns

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Lead Free :

Lead Free

Additional Feature :

ULTRA-LOW RESISTANCE

Width :

6.22mm

JEDEC-95 Code :

TO-252AA

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Packaging :

Tube

Threshold Voltage :

1V

ECCN Code :

EAR99

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Number of Elements :

1

Number of Terminations :

2

Resistance :

6.8mOhm