AUIRLR3636
- Mfr.Part #
- AUIRLR3636
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- AUIRLR3636 - 55V-60V N-CHANNEL A
- Stock
- 12,614
- In Stock :
- 12,614
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3779pF @ 50V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 99A
- Power Dissipation :
- 143W
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 50A, 10V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 16V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Case Connection :
- DRAIN
- Height :
- 2.39mm
- Power Dissipation-Max :
- 143W Tc
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2011
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Length :
- 6.73mm
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Threshold Voltage :
- 1V
- Factory Lead Time :
- 13 Weeks
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 4.5V
- Rise Time :
- 216ns
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 43 ns
- Width :
- 6.22mm
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Turn On Delay Time :
- 45 ns
- Base Part Number :
- AUIRLR3636
- Fall Time (Typ) :
- 69 ns
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Contact Plating :
- Tin
- Resistance :
- 6.8mOhm
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±16V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 50A
- Datasheets
- AUIRLR3636

N-Channel Tube 6.8m Ω @ 50A, 10V ±16V 3779pF @ 50V 49nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRLR3636 Description
AUIRLR3636 HEXFET? Power MOSFET, which was created especially for automotive applications, makes use of cutting-edge manufacturing methods to deliver incredibly low on-resistance per silicon area. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design.
These characteristics work together to provide a highly effective and dependable gadget that may be used in a multitude of applications, including automotive ones.
AUIRLR3636 Features
-
Fast Switching
-
Logic Level Gate Drive
-
Automotive Qualified *
-
Ultra Low On-Resistance
-
Lead-Free, RoHS Compliant
-
Advanced Process Technology
-
175°C Operating Temperature
-
Repetitive Avalanche Allowed up to Tjmax
AUIRLR3636 Applications
-
Industrial
-
Enterprise systems
-
Communications equipment
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