AUIRLR3410TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7.2 ns

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Width :

6.223mm

Transistor Application :

SWITCHING

FET Type :

N-Channel

Series :

HEXFET®

JEDEC-95 Code :

TO-252AA

Published :

2010

Mount :

Surface Mount

Continuous Drain Current (ID) :

17A

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

ECCN Code :

EAR99

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

79W

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Gate to Source Voltage (Vgs) :

16V

Terminal Position :

Single

Case Connection :

DRAIN

Rise Time :

53ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Fall Time (Typ) :

26 ns

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

79W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

Vgs (Max) :

±16V

Resistance :

105mOhm

Length :

6.7056mm

RoHS Status :

ROHS3 Compliant

Height :

2.3876mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Number of Terminations :

2

Drain to Source Breakdown Voltage :

100V