AUIRLR2905

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

84ns

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Power Dissipation-Max :

110W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1V

JESD-609 Code :

e3

Radiation Hardening :

No

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Continuous Drain Current (ID) :

42A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount, Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Height :

2.39mm

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

2V @ 250μA

Lead Free :

Lead Free

Factory Lead Time :

52 Weeks

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Mounting Type :

Surface Mount

Fall Time (Typ) :

15 ns

Case Connection :

DRAIN

Length :

6.73mm

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Published :

2006

Power Dissipation :

110W

Gate to Source Voltage (Vgs) :

16V

Turn On Delay Time :

11 ns

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

55V

Turn-Off Delay Time :

26 ns

REACH SVHC :

No SVHC

Vgs (Max) :

±16V

Number of Pins :

3

Number of Terminations :

2