AUIRLR120N

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

16V

Avalanche Energy Rating (Eas) :

85 mJ

Threshold Voltage :

1V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Height :

2.39mm

Element Configuration :

Single

Series :

HEXFET®

Rise Time :

35ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

185m Ω @ 6A, 10V

Nominal Vgs :

1 V

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Power Dissipation :

48W

Continuous Drain Current (ID) :

10A

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

48W Tc

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

22 ns

Peak Reflow Temperature (Cel) :

260

Published :

2011

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

4 ns

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.225Ohm

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Vgs (Max) :

±16V

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Case Connection :

DRAIN

Turn-Off Delay Time :

23 ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Width :

6.22mm

Contact Plating :

Tin

FET Type :

N-Channel

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.73mm

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30