AUIRLR024Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

25 mJ

Published :

2003

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

35W Tc

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

JEDEC-95 Code :

TO-252AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

16A Tc

DS Breakdown Voltage-Min :

55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Reference Standard :

AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Rds On (Max) @ Id, Vgs :

58m Ω @ 9.6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

9.9nC @ 5V

Drain Current-Max (Abs) (ID) :

16A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.058Ohm

Pulsed Drain Current-Max (IDM) :

64A

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED