AUIRLR024N

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Mfr.Part #
AUIRLR024N
Manufacturer
International Rectifier
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
AUTOMOTIVE HEXFET N-CHANNEL
Stock
11,484
In Stock :
11,484

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.08Ohm
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
1V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins :
3
Element Configuration :
Single
REACH SVHC :
No SVHC
Turn-Off Delay Time :
20 ns
Contact Plating :
Tin
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
65m Ω @ 10A, 10V
Continuous Drain Current (ID) :
17A
Power Dissipation :
45W
Rise Time :
74ns
Pulsed Drain Current-Max (IDM) :
72A
Width :
6.22mm
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
68 mJ
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Number of Elements :
1
Number of Terminations :
2
JEDEC-95 Code :
TO-252AA
Turn On Delay Time :
7.1 ns
Gate to Source Voltage (Vgs) :
16V
Vgs(th) (Max) @ Id :
2V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HEXFET®
Vgs (Max) :
±16V
Power Dissipation-Max :
45W Tc
Length :
6.73mm
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
29 ns
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Drain to Source Breakdown Voltage :
55V
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Mounting Type :
Surface Mount
Height :
2.39mm
Published :
2006
Radiation Hardening :
No
Terminal Form :
Gull wing
JESD-609 Code :
e3
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
30
Datasheets
AUIRLR024N
Introducing Transistors - FETs, MOSFETs - Single International Rectifier AUIRLR024N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, AUIRLR024N pinout, AUIRLR024N datasheet PDF, AUIRLR024N amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier AUIRLR024N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier AUIRLR024N


N-Channel Tube 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRLR024N Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 68 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 480pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 17A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 72A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.1 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.In this case, the threshold voltage of the transistor is 1V, which means that it will not activate any of its functions when its threshold voltage reaches 1V.Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.

AUIRLR024N Features


the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 72A.
a threshold voltage of 1V


AUIRLR024N Applications


There are a lot of Infineon Technologies
AUIRLR024N applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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