AUIRLR014N
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- Mfr.Part #
- AUIRLR014N
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 10A DPAK
- Stock
- 3,491
- In Stock ：
- 3,491
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 55V
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 265pF @ 25V
- Packaging :
- Tube
- Fall Time (Typ) :
- 23 ns
- Width :
- 6.22mm
- Rise Time :
- 47ns
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 6A, 10V
- Length :
- 6.73mm
- ECCN Code :
- EAR99
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 28W
- Turn-Off Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Element Configuration :
- Single
- Power Dissipation-Max :
- 28W Tc
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 16V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±16V
- Continuous Drain Current (ID) :
- 10A
- FET Type :
- N-Channel
- Published :
- 2010
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 7.9nC @ 5V
- Threshold Voltage :
- 1V
- Lead Free :
- Lead Free
- Height :
- 2.39mm
- Turn On Delay Time :
- 6.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Datasheets
- AUIRLR014N
N-Channel Tube 140m Ω @ 6A, 10V ±16V 265pF @ 25V 7.9nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRLR014N Overview
A device's maximal input capacitance is 265pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
AUIRLR014N Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 12 ns
a threshold voltage of 1V
AUIRLR014N Applications
There are a lot of Infineon Technologies
AUIRLR014N applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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