AUIRLL024NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

9 Weeks

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Threshold Voltage :

1V

Drain to Source Breakdown Voltage :

55V

FET Type :

N-Channel

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

Radiation Hardening :

No

Rise Time :

21ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Turn On Delay Time :

7.4 ns

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Number of Terminations :

4

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

3.1A

Mount :

Surface Mount

Turn-Off Delay Time :

18 ns

Power Dissipation :

2.1W

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Number of Elements :

1

ECCN Code :

EAR99

Series :

HEXFET®

Published :

2011

Gate to Source Voltage (Vgs) :

16V

Fall Time (Typ) :

25 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.065Ohm

Package / Case :

TO-261-4, TO-261AA

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing