AUIRLL024N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

120 mJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Series :

HEXFET®

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

3.1A

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 5V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Number of Terminations :

4

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

12A

Reach Compliance Code :

Compliant

Terminal Finish :

Matte Tin (Sn)

Published :

2014

Drain-source On Resistance-Max :

0.065Ohm

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Surface Mount :

yes

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1W Ta

Drain to Source Voltage (Vdss) :

55V