AUIRL7766M2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Number of Terminations :

5

Power Dissipation :

62.5W

Fall Time (Typ) :

49 ns

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

237 mJ

Additional Feature :

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Package / Case :

DirectFET™ Isometric M4

Rise Time :

24ns

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

10A

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Threshold Voltage :

2.5V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta 62.5W Tc

Turn On Delay Time :

16 ns

Vgs (Max) :

±16V

Number of Elements :

1

Published :

2011

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

204A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

51A

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

10m Ω @ 31A, 10V

JESD-30 Code :

R-XBCC-N5

Drain-source On Resistance-Max :

0.01Ohm

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

5305pF @ 25V

Number of Pins :

9

Turn-Off Delay Time :

120 ns

JESD-609 Code :

e3