AUIRL7732S2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

DirectFET™ Isometric SC

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.2W Ta 41W Tc

Rise Time :

123ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2011

Number of Pins :

7

Power Dissipation :

2.2W

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Gate to Source Voltage (Vgs) :

16V

JESD-30 Code :

R-XBCC-N3

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 50μA

Number of Elements :

1

Turn On Delay Time :

21 ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0066Ohm

Mount :

Surface Mount

Continuous Drain Current (ID) :

14A

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 35A, 10V

Vgs (Max) :

±16V

Terminal Position :

BOTTOM

Pulsed Drain Current-Max (IDM) :

230A

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

14A Ta

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Threshold Voltage :

1.8V

Fall Time (Typ) :

37 ns

Turn-Off Delay Time :

22 ns

Additional Feature :

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Drain to Source Breakdown Voltage :

40V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

58A

Case Connection :

DRAIN