AUIRL1404ZSTRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Number of Terminations :

2

JESD-609 Code :

e3

FET Type :

N-Channel

Terminal Position :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Avalanche Energy Rating (Eas) :

490 mJ

Vgs (Max) :

±16V

DS Breakdown Voltage-Min :

40V

Drain-source On Resistance-Max :

0.0031Ohm

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

160A

ECCN Code :

EAR99

Power Dissipation-Max :

200W Tc

Published :

2013

Pulsed Drain Current-Max (IDM) :

790A

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.7V @ 250μA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 5V