AUIRL1404Z

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.51mm

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 75A, 10V

Case Connection :

DRAIN

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 5V

Rise Time :

180ns

Power Dissipation-Max :

200W Tc

Drain to Source Breakdown Voltage :

40V

Avalanche Energy Rating (Eas) :

490 mJ

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

16V

Threshold Voltage :

1.4V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Element Configuration :

Single

ECCN Code :

EAR99

Mount :

Through Hole

Factory Lead Time :

16 Weeks

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

19 ns

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

790A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.66mm

Turn-Off Delay Time :

30 ns

REACH SVHC :

No SVHC

Resistance :

5.9mOhm

Continuous Drain Current (ID) :

160A

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Width :

4.82mm

Published :

2010

Power Dissipation :

200W

Series :

HEXFET®

Vgs (Max) :

±16V

Packaging :

Tube

Package / Case :

TO-220-3

Fall Time (Typ) :

49 ns