AUIRL1404STRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

DS Breakdown Voltage-Min :

40V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

520 mJ

Factory Lead Time :

9 Weeks

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Number of Terminations :

2

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

160A

ECCN Code :

EAR99

Surface Mount :

yes

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

3.8W Ta 200W Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Series :

HEXFET®

JEDEC-95 Code :

TO-263AB

Published :

2010

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.004ohm

Pulsed Drain Current-Max (IDM) :

640A

RoHS Status :

RoHS Compliant