AUIRFZ48ZS
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- Mfr.Part #
- AUIRFZ48ZS
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 61A D2PAK
- Stock
- 11,389
- In Stock ：
- 11,389
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 39 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width :
- 9.65mm
- Power Dissipation-Max :
- 91W Tc
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 15 ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Packaging :
- Tube
- Length :
- 10.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Resistance :
- 8.6mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Height :
- 4.83mm
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 91W
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1720pF @ 25V
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 35 ns
- Drain to Source Breakdown Voltage :
- 55V
- Factory Lead Time :
- 16 Weeks
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 69ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 37A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 61A
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Series :
- HEXFET®
- Published :
- 2011
- Datasheets
- AUIRFZ48ZS
N-Channel Tube 11m Ω @ 37A, 10V ±20V 1720pF @ 25V 64nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFZ48ZS Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1720pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 61A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
AUIRFZ48ZS Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 240A.
AUIRFZ48ZS Applications
There are a lot of Infineon Technologies
AUIRFZ48ZS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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