AUIRFZ44N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

49A

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V

Case Connection :

DRAIN

Height :

16.51mm

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

Transistor Element Material :

SILICON

Turn On Delay Time :

7.3 ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Contact Plating :

Tin

Power Dissipation :

45W

Number of Elements :

1

Turn-Off Delay Time :

47 ns

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Power Dissipation-Max :

94W Tc

Mount :

Surface Mount, Through Hole

Rise Time :

69ns

Vgs (Max) :

±20V

Width :

4.82mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Fall Time (Typ) :

60 ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

ECCN Code :

EAR99

Length :

10.66mm

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks