AUIRFZ44N
- Mfr.Part #
- AUIRFZ44N
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- AUTOMOTIVE HEXFET N CHANNEL
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 49A
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Power Dissipation-Max :
- 94W Tc
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Turn On Delay Time :
- 7.3 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 17.5m Ω @ 25A, 10V
- Fall Time (Typ) :
- 60 ns
- Turn-Off Delay Time :
- 47 ns
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Published :
- 2007
- Drain to Source Breakdown Voltage :
- 55V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Contact Plating :
- Tin
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Packaging :
- Tube
- Number of Elements :
- 1
- Rise Time :
- 69ns
- Width :
- 4.82mm
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Input Capacitance (Ciss) (Max) @ Vds :
- 1470pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.66mm
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 2V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount, Through Hole
- Height :
- 16.51mm
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 45W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Datasheets
- AUIRFZ44N
N-Channel Tube 17.5m Ω @ 25A, 10V ±20V 1470pF @ 25V 63nC @ 10V TO-220-3
AUIRFZ44N Description
This cellular design of AUIRFZ44N HEXFET Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge processing techniques to achieve low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.
AUIRFZ44N Features
-
Isolated Package
-
Low On-Resistance
-
Fully Avalanche Rated
-
Automotive Qualified
-
Lead-Free, RoHS Compliant
-
Advanced Planar Technology
-
175°C Operating Temperature
-
High Voltage Isolation = 2.5KVRMS
-
Sink to Lead Creepage Distance = 4.8mm
AUIRFZ44N Applications
-
Industrial
-
Personal electronics
-
Communications equipment
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