AUIRFZ34N
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- Mfr.Part #
- AUIRFZ34N
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- AUTOMOTIVE HEXFET N CHANNEL
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 16.13mm
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 55V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Length :
- 10.75mm
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 7 ns
- Turn-Off Delay Time :
- 31 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.04Ohm
- Continuous Drain Current (ID) :
- 29A
- Published :
- 2007
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Power Dissipation :
- 68W
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 2V
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Radiation Hardening :
- No
- Series :
- HEXFET®
- Packaging :
- Tube
- Rise Time :
- 49ns
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Fall Time (Typ) :
- 40 ns
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 16A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Number of Pins :
- 3
- Width :
- 4.83mm
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 68W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-3
- Datasheets
- AUIRFZ34N
N-Channel Tube 40m Ω @ 16A, 10V ±20V 700pF @ 25V 34nC @ 10V TO-220-3
AUIRFZ34N Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 65 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 29A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
AUIRFZ34N Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 31 ns
a threshold voltage of 2V
AUIRFZ34N Applications
There are a lot of Infineon Technologies
AUIRFZ34N applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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