AUIRFZ24NSTRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 45W Tc

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

17A

Published :

2015

Series :

HEXFET®

JESD-30 Code :

R-PDSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

71 mJ

Pulsed Drain Current-Max (IDM) :

68A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-263AB

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Drain-source On Resistance-Max :

0.07Ohm

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Terminal Form :

Gull wing

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

16 Weeks