AUIRFZ24NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Pins :

3

Series :

HEXFET®

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.07Ohm

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Width :

9.65mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

19 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

27 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Vgs (Max) :

±20V

Turn On Delay Time :

4.9 ns

Packaging :

Tube

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JESD-30 Code :

R-PDSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Length :

10.67mm

Number of Terminations :

2

JESD-609 Code :

e3

Rise Time :

34ns

Height :

4.83mm

Drain to Source Breakdown Voltage :

55V

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

68A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Elements :

1

Factory Lead Time :

16 Weeks

Published :

2011

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

4V

Power Dissipation-Max :

3.8W Ta 45W Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

3.8W

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

17A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE