AUIRFU540Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Factory Lead Time :

13 Weeks

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

35A

Power Dissipation :

91W

Series :

HEXFET®

Lead Free :

Lead Free

Rds On Max :

28.5 mΩ

Vgs(th) (Max) @ Id :

4V @ 50μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

FET Type :

N-Channel

Drain to Source Resistance :

22.5mOhm

Max Operating Temperature :

175°C

Rise Time :

42ns

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14 ns

Power Dissipation-Max :

91W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Mount :

Through Hole

Turn-Off Delay Time :

43 ns

Input Capacitance :

1.69nF

Vgs (Max) :

±20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

28.5mOhm @ 21A, 10V

Published :

2013

Fall Time (Typ) :

34 ns

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Supplier Device Package :

I-PAK