AUIRFU3607
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- Mfr.Part #
- AUIRFU3607
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N CH 75V 56A I-PAK
- Stock
- 3,943
- In Stock ：
- 3,943
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 16 ns
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 75V
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 80A
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 110ns
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Power Dissipation :
- 140W
- Packaging :
- Tube
- Turn-Off Delay Time :
- 43 ns
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 46A, 10V
- Published :
- 2015
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 96 ns
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3070pF @ 50V
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 56A
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 11 Weeks
- Vgs (Max) :
- ±20V
- Additional Feature :
- HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 75V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Mount :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation-Max :
- 140W Tc
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.009Ohm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Datasheets
- AUIRFU3607
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N-Channel Tube 9m Ω @ 46A, 10V ±20V 3070pF @ 50V 84nC @ 10V 75V TO-251-3 Short Leads, IPak, TO-251AA
AUIRFU3607 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3070pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 56A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRFU3607 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 43 ns
a 75V drain to source voltage (Vdss)
AUIRFU3607 Applications
There are a lot of Infineon Technologies
AUIRFU3607 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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