AUIRFSL8409
- Mfr.Part #
- AUIRFSL8409
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Short Leads, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 195A TO262
- Stock
- 56
- In Stock :
- 56
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Rds On Max :
- 1.2 mΩ
- Drain to Source Voltage (Vdss) :
- 40V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.2mOhm @ 100A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 160 ns
- Mount :
- Surface Mount, Through Hole
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2010
- Supplier Device Package :
- TO-262
- Fall Time (Typ) :
- 100 ns
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 14240pF @ 25V
- Continuous Drain Current (ID) :
- 195A
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3.9V @ 250μA
- Turn On Delay Time :
- 32 ns
- Factory Lead Time :
- 16 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Drain to Source Resistance :
- 1.2mOhm
- Packaging :
- Tube
- Rise Time :
- 105ns
- Gate Charge (Qg) (Max) @ Vgs :
- 450nC @ 10V
- Power Dissipation-Max :
- 375W Tc
- Drain to Source Breakdown Voltage :
- 40V
- Package / Case :
- TO-262-3 Short Leads, I2Pak
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 14.24nF
- Series :
- HEXFET®
- Datasheets
- AUIRFSL8409

N-Channel Tube 1.2mOhm @ 100A, 10V ±20V 14240pF @ 25V 450nC @ 10V 40V TO-262-3 Short Leads, I2Pak
AUIRFSL8409 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 160 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRFSL8409 Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 160 ns
single MOSFETs transistor is 1.2mOhm
a 40V drain to source voltage (Vdss)
AUIRFSL8409 Applications
There are a lot of Infineon Technologies
AUIRFSL8409 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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